Fig. 4. Temperature-dependent I−V characteristics of MoTe₂/SnSe₂ heterojunction diode. (b) Arrhenius plots of the reverse current. (c) Energy band diagram of SnSe₂/MoTe₂ heterostructure.

Applied Science and Convergence Technology 2024;33:164~166 https://doi.org/10.5757/ASCT.2024.33.6.164

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