Fig. 1. (a) Fabrication process of the flexible photosensor with InN NWs and graphene. (b) Raman spectra of graphene layers transferred onto the PET substrate. (c) I−V characteristic curves of the flexible photosensors with respect to the number of bottom graphene layers at the light intensity of 60 mW/cm². (d) Photocurrent and photoresponsivity of the photosensors under bending tests with respect to the degree of strain. (e) Photocurrent of the photosensor after device fabrication: measured immediately, 4, 7, 11, and 15 days.

Applied Science and Convergence Technology 2025;34:27~30 https://doi.org/10.5757/ASCT.2025.34.1.27

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