Fig. 5. (Color online) (a) Conductance as a function of DC-bias voltage (V_DS) for graphene FET after 24 h from condition B shown in . Here, the black and red lines are I–V_DS curves measured after the (b) first, (c) second and (d) third, (e) fourth AFM scanning processes, respectively. (b) First and (c) second scanned topography images of graphene channel after 24 h from condition B shown in . (d) Third and (e) fourth scanned topography images of graphene channel leading to an electric characterization of red I–V_DS curve in (a). Here, the arrows I (d) and (e) indicate the damage to the graphene surface during the AFM scanning process.

Applied Science and Convergence Technology 2019;28:51~54 https://doi.org/10.5757/ASCT.2019.28.3.51

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