Fig. 5. (Color online) (a) Optical image of top-gate MOSFET device, and (b) I–V characteristic of top-gate MOSFET with 1T′-phase few-layers MoTe₂ thin film. (a) (b) (c)

Applied Science and Convergence Technology 2019;28:155~158 https://doi.org/10.5757/ASCT.2019.28.5.155

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