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Fig. 4.
Fig. 4. Graphene-MoS2 heterojunction-based, back-gate FET device shown (a) under an optical microscopy and (b) as a schematic illustration, both showing edge contacts of MoS2 channel layer to the graphene electrodes. (Parts a and b reprinted with permission from 47, copyright © 2017 Royal Society of Chemistry.)
Applied Science and Convergence Technology 2017;26:55~61
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