Fig. 4. Graphene-MoS₂ heterojunction-based, back-gate FET device shown (a) under an optical microscopy and (b) as a schematic illustration, both showing edge contacts of MoS₂ channel layer to the graphene electrodes. (Parts a and b reprinted with permission from 47, copyright © 2017 Royal Society of Chemistry.)

Applied Science and Convergence Technology 2017;26:55~61 https://doi.org/10.5757/ASCT.2017.26.4.55

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