Fig. 5. (a) Device schematic, in which the holes are etched only in the areas of metal contact. Covalent contacts are achieved at the perimeter of the holes, and top contacts exist in the remaining areas. (b) Schematic of the hole pattern of the graphene device, in which the holes are arranged evenly under the contact area. L_m is the length of the metal, W is the width of graphene, and r_h is the hole radius. (Parts a and b reprinted with permission from 50, copyright © 2017 AIP Publishing LLC.)

Applied Science and Convergence Technology 2017;26:55~61 https://doi.org/10.5757/ASCT.2017.26.4.55

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