The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with three different surface cleaning methods of vacuum heating, As-beam exposure, and Ga-beam deposition at the substrate temperature of 800℃ in the MBE growth chamber. Growth temperature and thickness of the GaAs epitaxial layer were 800℃ and 1 μm, respectively. The surface structure and properties were investigated by reflection high-energy electron diffraction (RHEED), AFM (Atomic force microscope), DXRD (Double crystal x-ray diffraction), PL (Photoluminescence), and PR (Photoreflectance). From RHEED, the surface structure of GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition is (2×4). The GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition has a high quality.

Keywords: 갈륨비소,표면세척,실리콘,분자선에피택시,GaAs,Si,Surface cleaning,Molecular beam epitaxy