Applied Science and Convergence Technology 2004; 13(3): 109-113
Published online September 1, 2004
Copyright © The Korean Vacuum Society.
Zn diffusions in InP have been studied by electrochemical capacitance voltage. The InP layer was grown by metal organic chemical vapor deposition, and Zn₃P₂ thin film was deposited on the epitaxial substrates. The samples annealed in a rapid thermal annealing. It is demonstrated that surface hole concentration as high as 1×10^(19) cm-³ can be achieved. When the Zn diffusion was carried at 550℃ and 5-20 min., the diffusion depth of hole concentration moves from 1.51 ㎛ to 3.23 ㎛, and the diffusion coefficient of Zn is 5.4×10^(-11) ㎠/sec. After activation, the concentration is two orders higher than that of untreated sample at 0.30 ㎠ depth. As the annealing time is increase, the hole concentration remains almost constant, except deep depth. It means that excess Zn interstitials exist in the doped region is rapidly diffusion into the undoped region and convert into substitutional when the thickness of SiO₂ thin film is above 1,000Å, the hole concentration becoms stable distribution.