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Applied Science and Convergence Technology 2006; 15(2): 216-222

Published online March 1, 2006

Copyright © The Korean Vacuum Society.

Electrical Property in InAs/GaAs Quantum Dot Infrared Photodetector with Hydrogen Plasma Treatment

H. D. Nam,J. D. Song,W. J. Choi,W. J. Cho,J. I. Lee,J. W. Choe,H. S. Yang


In this paper, we investigated the effect of hydrogen plasma (H plasma) treatment on the electrical and optical properties of a quantum dot infrared photodetector (QDIP) with a 5 stacked InAs dots in an InGaAs/GaAs well structure and Al0.3Ga0.7As/GaAs SL (superlattice) current blocking layer. It has been observed that H plasma treatment didn’t affect the band structure of QDIP. It has been also observed that the H plasma treatment on the QDIP not only enhance the electrical property of QDIP by curing the defect channels in Al0.3Ga0.7As/GaAs SL but also introduce defects in QDIP structure. The H plasma treatment for 10 min with 20 W of RF power provided the lowest dark current, which made it possible to measure the photo current (PC) of QDIP whose PC was not detectable without the H plasma treatment due to the high dark current.

Keywords: 양자점,양자점 적외선 수광소자,수소화처리,Quantum dot,Quantum dot infrared photodetector,Hydrogen plama treatment

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