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Applied Science and Convergence Technology 2006; 15(3): 294-300

Published online May 1, 2006

Copyright © The Korean Vacuum Society.

Structural and Optical Characteristics of InAs/InAlGaAs Quantum Dots Grown on InP/InGaAs/InP Distributed Feedback Grating Structure

H. S. Kwack,J. S. Kim,J. H. Lee,S. U. Hong,B. S. Choi,D. K. Oh,Y. H. Cho

Abstract

We fabricated the distributed feedback (DFB) InP/InGaAs/InP grating structures on InP (100) substrates by metal organic chemical vapor deposition, and their structural properties were investigated by atomic force microscopy and scanning electron microscopy. Self assembled InAs/InAlGaAs quantum dots (QDs) were grown on the InP/InGaAs/InP grating structures by molecular beam epitaxy, and their optical properties were compared with InAs/InAlGaAs QDs without grating structure. The duty of the grating structures was about 30%. The PL peak position of InAs/InAlGaAs QDs grown on the grating structure was 1605 ㎚, which was red shifted by 18 ㎚ from that of the InAs/InAlGaAs QDs without grating structure. This indicates that the formation of InAs/InAlGaAs QDs was affected by the existence of the DFB grating structures.

Keywords: 분포귀환형,InAs/InAlGaAs,양자점,분자선증착기,Distributed feedback,Quantum dot,Molecular beam epitaxy

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