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Applied Science and Convergence Technology 2006; 15(3): 301-307

Published online May 1, 2006

Copyright © The Korean Vacuum Society.

Carrier Dynamics of P-modulation Doped In(Ga)As/InGaAsP Quantum Dots

Y. D. Jang,J. Park,D. Lee,S. U. Hong,D. K. Oh


We have investigated optical properties of p-modulation doped In(Ga)As quantum dots (QDs) on InP substrate with a comparison with the undoped QDs. Photoluminscence (PL) intensity of doped QDs at 10 K was about 10 times weaker than that of undoped QD sample. The decay time of doped QD sample at its PL peak, obtained from the time resolved PL (TR PL) experiment at 10 K, was very fast compared to that of undoped sample. We interpret that this fast decay time of the doped QD sample comes from the addition of non-radiatve recombination paths, which are originated from the doping-related defects.

Keywords: 양자점,변조도핑,쇠퇴시간,Quantum dots,Modulation doping,Decay time

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