Applied Science and Convergence Technology 2006; 15(6): 624-629
Published online November 1, 2006
Copyright © The Korean Vacuum Society.
Jong-Ho Song,Seuk Joo Rhee
The energy transfer process between GaN and Nd ions as well as Mg codoping effect were investigated in Nd-implanted GaN films. Photoluminescence (PL) and PL excitation spectroscopies were performed on ⁴F3/2 → ⁴I9/2 Nd ionic level transition. At least three below bandgap traps were identified in the energy transfer process. The number of one particular trap, which is assigned to be an isoelectronic Nd trap, is increased with the Mg-codoping. The emission efficiency with above gap excitation, which emulates the electrical excitation, is further increased in GaN:Mg,Nd.
Keywords: Nd,GaN,에너지 전달,trap,energy transfer