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Applied Science and Convergence Technology 2006; 15(6): 624-629

Published online November 1, 2006

Copyright © The Korean Vacuum Society.

Optical Characterization on Undoped and Mg-doped GaN Implanted with Nd

Jong-Ho Song,Seuk Joo Rhee

Abstract

The energy transfer process between GaN and Nd ions as well as Mg codoping effect were investigated in Nd-implanted GaN films. Photoluminescence (PL) and PL excitation spectroscopies were performed on ⁴F3/2 → ⁴I9/2 Nd ionic level transition. At least three below bandgap traps were identified in the energy transfer process. The number of one particular trap, which is assigned to be an isoelectronic Nd trap, is increased with the Mg-codoping. The emission efficiency with above gap excitation, which emulates the electrical excitation, is further increased in GaN:Mg,Nd.

Keywords: Nd,GaN,에너지 전달,trap,energy transfer

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