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Applied Science and Convergence Technology 2007; 16(1): 15-22

Published online January 1, 2007

Copyright © The Korean Vacuum Society.

Morphological Evolution of GaAs(100) Surfaces during Inductively Coupled Plasma Etching at Floating Potential

Sang Ho Lee

Abstract

We present the morphological evolution at different source powers in the ion-enhanced etching of GaAs(100) in BCl3-Cl2 plasma. With little ion bombardment at floating potential, the surface develops 〈110〉 ridges and {111} facets, as it does in purely chemical etching. The morphology develops in less than 1 minute and grows bigger over time. The etched surfaces show different morphologies at different source powers with constant pressures of gases. Lower source power (100 W) produces poorly developed crystallographic surfaces while higher source power (900 W) produces well developed crystallographic surfaces. This is attributed to the availability of excited reactive species (chlorine atoms) depending on source powers. With more concentration of the reactive species at higher source powers, the surface of GaAs(100) would be a surface that is expected from thermodynamics while the surface morphology would be determined by sputtering in the lack of reactive species. Statistical analysis of the surfaces, based on scaling theory, revealed two spatial exponents: one (smaller than one) is formed by atomic scale mechanisms, the other (larger than one) is formed by larger scale mechanisms which is believed to develop facets.

Keywords: 식각,표면,GaAs,scaling theory,Etching,Surface

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