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Applied Science and Convergence Technology 2012; 21(1): 62-68

Published online January 1, 2012

Copyright © The Korean Vacuum Society.

Incident Angle Dependence of Quantum Efficiency in c-Si Solar Cell or a-Si Thin Film Solar Cell in BIPV System

Jeong-Wook Kang,Chan-Hee Son,Guang-Sup Cho,Jin Hyuk Yoo,Joung-Sik Kim,Chang-Kyun Park,Sung-Duk Cha,Gi-Chung Kwon

Abstract

The conversion efficiency of solar cells depending on incident angle of light is important for building-integrated photovoltaics (BIPV) applications. The quantum efficiency is the ratio of the number of charge carriers collected by the solar cell to the number of photons of a given energy shining on the solar cell. The analysis of angle dependence of quantum efficiencies give more information upon the variation of power output of a solar cell by the incident angle of light. The variations in power output of solar cells with increasing angle of incidence is different for the type of cell structures. In this study we present the results of the quantum efficiency measurement of single-crystalline silicon solar cells and a-Si:H thin-film solar cells with the angle of incidence of light. As a result, as the angle of incidence increases in single-crystalline silicon solar cells, quantum efficiency at all wavelength (300∼1,100 nm) of light were reduced. But in case of a-Si:H thin-film solar cells, quantum efficiency was increased or maintained at the angle of incidence from 0 degree to about 40 degrees and dramatically decrease at more than 40 degrees in the range of visible light. This results of quantum efficiency with increasing incident angle were caused by haze and interference effects in thin-film structure. Thus, the structural optimization considering incident angle dependence of solar cells is expected to benefit BIPV.

Keywords: 실리콘 태양전지,반사방지막,텍스쳐,입사각,EQE,건재 일체형 태양광발전,Silicon solar cell,Anti-reflection coating,Texture,Incident angle of light,EQE,Building-integrated photovoltaics

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