Applied Science and Convergence Technology 2015; 24(4): 117-124
Published online July 31, 2015
Copyright © The Korean Vacuum Society.
Yong Hun Koa, Yooseok Kimb, Daesung Jungc, Seung Ho Parka, Ji Sun Kima, Jini Shima, Hyeju Yuna, Wooseok Songd, and Chong-Yun Parka*
aDepartment of Physics, Sungkyunkwan University, Suwon 16419, Korea
bAdvanced Nano-Surface Research Group, Korea Basic Science Institute (KBSI), Daejeon 305-333, Korea
cDepartment of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
dThin Film Materials Laboratory, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea
Correspondence to:Chong-Yun Park
This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
A direct growth method of graphene on insulating substrate without catalyst etching and transfer process was developed using Au/Ni/a-C catalyst system. During the growth process, behavior of the Au/Ni catalyst was investigated using EDX, XPS, SEM, and Raman spectroscopy. The Au/Ni catalyst layer was evaporated during growth process of graphene. The graphene film was composed mono-layer flakes. The transmittance of the graphene film was ∼80.6%.
Keywords: Graphene, Direct growth, Eutectic temperature, Amorphous carbon