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Research Paper

Applied Science and Convergence Technology 2014; 23(4): 169-178

Published online July 30, 2014

Copyright © The Korean Vacuum Society.

Numerical Modeling of an Inductively Coupled Plasma Based
Remote Source for a Low Damage Etch Back System

Junghoon Joo*

Graduate Program of Plasma Convergence Engineering & Plasma Materials Research Center,
Kunsan National University

Correspondence to:Junghoon Joo*

Received: July 22, 2014; Revised: July 29, 2014; Accepted: July 30, 2014


Fluid model based numerical analysis is done to simulate a low damage etch back system
for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very
high material selectivity. One possible mechanism is three steps: reactive radical generation,
adsorption and thermal desorption. In this study, plasma generation and transport steps are
analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + CF4 ICP
was used as a model and the effect of reactive gas inlet position was investigated in 2D
and 3D. At 200∼300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work
well and generated higher density of F and F2 radicals in the lower chamber region while
suppressing ions reach to the wafer by a double layer conducting barrier.

Keywords: numerical modeling, inductively coupled plasma, etch back, gas inlet position, CFD-ACE+

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