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Research Paper

Applied Science and Convergence Technology 2014; 23(4): 179-186

Published online July 30, 2014

Copyright © The Korean Vacuum Society.

Numerical Modeling of an Inductively Coupled Plasma Sputter
Sublimation Deposition System

Junghoon Joo*

Department of Materials Science & Engineering & Plasma Materials Research Center,
Kunsan National University

Correspondence to:Junghoon Joo*

Received: July 22, 2014; Revised: July 29, 2014; Accepted: July 30, 2014


Fluid model based numerical simulation was carried out for an inductively coupled plasma
assisted sputter deposition system. Power absorption, electron temperature and density
distribution was modeled with drift diffusion approximation. Effect of an electrically
conducting substrate was analyzed and showed confined plasma below the substrate. Part
of the plasma was leaked around the substrate edge. Comparison between the quasi-neutrality
based compact model and Poisson equation resolved model showed more broadened profile
in inductively coupled plasma power absorption than quasi-neutrality case, but very similar
Ar ion number density profile. Electric potential was calculated to be in the range of 50
V between a Cr rod source and a conductive substrate. A new model including Cr sputtering
by Ar+was developed and used in simulating Cr deposition process. Cr was modeled to be
ionized by direct electron impact and showed narrower distribution than Ar ions.

Keywords: Numerical modeling, Inductively coupled plasma, Sputter sublimation, Deposition, CFD-ACE+

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