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Research Paper

Applied Science and Convergence Technology 2014; 23(4): 192-199

Published online July 30, 2014

Copyright © The Korean Vacuum Society.

Hydrazine Doped Graphene and Its Stability

MinHo Songa, Somyeong Shina, Taekwang Kima, Hyewon Dua, Hyungjun Kooa,
Nayoung Kimb, Eunkyu Leeb, Seungmin Chob, and Sunae Seoa,*

aDepartment of Physics, Sejong University,
bMicro Device&Machinery Solution Division, Samsung Techwin R&D Center

Correspondence to:Sunae Seoa,*

Received: June 16, 2014; Revised: July 30, 2014; Accepted: July 30, 2014

Abstract

The electronic property of graphene was investigated by hydrazine treatment. Hydrazine
(N2H4) highly increases electron concentrations and up-shifts Fermi level of graphene based
on significant shift of Dirac point to the negative gate voltage. We have observed contact
resistance and channel length dependent mobility of graphene in the back-gated device after
hydrazine monohydrate treatment and continuously monitored electrical characteristics under
Nitrogen or air exposure. The contact resistance increases with hydrazine-treated and
subsequent Nitrogen-exposed devices and reduces down in successive Air-exposed device
to the similar level of pristine one. The channel conductance curve as a function of gate
voltage in hole conduction regime keeps analogous value and shape even after Nitrogen/Air
exposure specially whereas, in electron conduction regime change rate of conductance along
with the level of conductance with gate voltage are decreased. Hydrazine could be utilized
as the highly effective donor without degradation of mobility but the stability issue to be
solved for future application.

Keywords: Vacuum standard, Ultrasonic interferometer manometer, Static expansion system, Orifice conductance, Dynamic expansion system, Uncertainty

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