Applied Science and Convergence Technology 2014; 23(5): 211-220
Published online September 30, 2014
Copyright © The Korean Vacuum Society.
B. H. Bononi dos Santosa, Y Galv
aDepartamento de Física, Universidade Federal de São Carlos (UFSCAR) 13560-905, São Carlos, SP, Brazil
bSchool of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham NG7 2RD, U.K.
Correspondence to:M. Heninib*
In this paper, we present a review of optical and structural studies of GaBixAs1-x epilayers
grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different
As fluxes. The results indicate that under near-stoichiometric conditions the bismuth
incorporation is higher for samples grown on (311)B GaAs substrates than for those grown
on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed
for both samples by optical measurements. The (311)B samples showed evidence of higher
density of defects. It has also been found that the nonradiative centers play a significant
role in the recombination process in this material system. The influence of post-growth
annealing on the microstructural, optical, and magneto-optical properties was also investigated.
An important improvement of optical and spin properties after thermal annealing due to the
reduction of defects in the GaBiAs layers was observed.
Keywords: Bismides, Molecular Beam Epitaxy, Defects, Growth, GaAsBi alloys