Applied Science and Convergence Technology 2014; 23(6): 357-365
Published online November 30, 2014
Copyright © The Korean Vacuum Society.
Myung-sun Choi, Seok-Hwan Lee, Yunchang Jang, Sangwon Ryu, and Gon-Ho Kim*
Department of Energy Systems Engineering, Seoul National University
Correspondence to:Gon-Ho Kim*
A non-invasive method for ion energy distribution measurement at a RF biased surface
is proposed for monitoring the property of ion bombardments in capacitively coupled plasma
sources. To obtain the ion energy distribution, the measured electrode voltage is analyzed
based on the circuit model which is developed with the linearized sheath capacitance on
the assumption that the RF driven sheath behaves like a simple diode for a bias power whose
frequency is much lower than the ion plasma frequency. The method is verified by comparing
the ion energy distribution function obtained from the proposed model with the experimental
result taken from the ion energy analyzer in a dual cathode capacitively coupled plasma source
driven by a 100 MHz source power and a 400 kHz bias power.
Keywords: Ion energy distribution, Non-invasive method, CCP, I-V monitoring, Ion energy