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Applied Science and Convergence Technology 1994; 3(1): 65-70

Published online March 1, 1994

Copyright © The Korean Vacuum Society.

Current Crowding Effects and Electromigration in Al - 1%Si Thin Film Metallizations

H. W. Cho,D. I. Kim,J. Y. Kim

Abstract

In this study, the lifetime variations in Al-1%Si thin film metallizations due to the local current crowding effects, with various metallizations line lengths, and the electric field effects in double-layer metallizations were investigated. To investigate the current crowding effects on the lifetime of thin film metallizations, the wide and narrow links and the saw type metallization structures were fabricated. To study the line length dependence of the lifetime, 100, 400, 800, 1200, and 1600 ㎛ thin film metallizations with 3 ㎛ line width were also fabricated. The current densities stressed in Al-1%Si thin film metallizations were in the range of 3.5~4.5×10^6A/㎠. To study the electric field effects on the lifetime in double-layer metallizations, the electric fields of 0, ±30, ±60V, were applied between the two metal lines, and the upper thin film metallization is stressed with 1.75×10^6A/㎠ current density. The mean time-to failure(MTF), standard deviation (σ), and 90% confidence limits were measured. Optical microscope and scanning electron microscope (SEM) were used to analyze the failures in thin film metallizations. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film metallizatrions. Also the lifetime decreases rapidly with the increase of the until saturation. The electric field effects accelerate the decrease of the lifetime in the double-layer metallizations.

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