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Applied Science and Convergence Technology 1994; 3(3): 264-268

Published online September 1, 1994

Copyright © The Korean Vacuum Society.

AES and XPS Analysis of GaAs Surfaces Sulfurized by H₂S Gas

Jang-Kyoo Shin,Dong-Geun Lee,Hang-Kyoo Kim


This paper presents experimental results on the sulfur treatment using H₂S gas to HCl-etched and NH₄OH-etched GaAs surfaces. AES(Auger electron spectroscopy) and XPS(x-ray photoelectron spectroscopy) spectra were obtained in order to determine the surface chemical species and their bonding states. The experiments were conducted with H₂S exposed samples at substrate temperatures of 30, 200, and 350℃. Sulfur is shown to bond to both Ga and As. The H₂S exposed surfaces heated at 350℃ had a higher sulfur coverage than those that were heated at 30℃ or 200℃. Like (NH₄)₂S or Na₂S solution treated samples, Ga or As oxide was not found after the H₂S treatment.

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