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Applied Science and Convergence Technology 1996; 5(3): 206-212

Published online September 1, 1996

Copyright © The Korean Vacuum Society.

Growth of In0.53Ga0.47As lattice matched to InP substrate by low pressure metalorganic chemical vapor deposition

Hyung-soo Park,Young-boo Moon,Euijoon Yoon,Hak-dong Cho,Tae-won Kang

Abstract

In_(1-x)Ga_xAs epitaxial layers were grown at 76 Torr by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Growth rate did not change much with growth temperature. Surface morphology of In_(1-x)Ga_xAs epitaxial layer was affected by lattice mismatch, growth temperature and AsH₃/(TMIn+TMGa) ratio. A high quality epilayer showed a full width at half maximum of 2.8 meV by photoluminescence measurement at 5K. The composition of the In_(1-x)Ga_xAs was determined by the relative gas phase diffusion of TMIn and TMGa. Lattice mismatch and growth temperature were the most important variables that determine the electrical properties of In_(1-x)Ga_xAs epitaxial layers. At optixized growth condition, it was possible to obtain a high quality In_(1-x)Ga_xAs epilayers with a electron concentration as low as 8×10¹⁴/㎤ and electron mobility as high as 11,000㎠/Vsec at room temperature.

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