Applied Science and Convergence Technology 1996; 5(3): 223-228
Published online September 1, 1996
Copyright © The Korean Vacuum Society.
Jae-Gon Lee,Sang-Jun Park,Sie-Young Choi
SiO₂ insulator layers on InSb have been prepared by remote PECVD system at a low temerature below 200℃. The effects of deposition pressure, temperature, and gas flow ratio on the physical and electrical characteristics of the SiO₂ were studied. The InSb MIS device using SiO₂ was fabricated and measured its current-voltage and capacitance-voltage characteristics at 77K. The films evaluated Auger electron spectroscopy showed that composition atoms were distributed uniformaly throuhout the oxide film and the outdiffusion of substrate atoms into the oxide were few. The leakage current density of the MIS device was about 6.26 ㎁/㎠ at 0.75 ㎹/㎝, and the breakdown voltage was about 1 ㎹/㎝. The interface-state density at mid-bandgap extracted from 1MHz C-V measurement was about 5.54×10¹¹ ㎝^(-2)eV^(-1).