Applied Science and Convergence Technology 1996; 5(3): 239-244
Published online September 1, 1996
Copyright © The Korean Vacuum Society.
Tae-Hee Choe,Seung-Eui Nam,Hyoung-June Kim
We firstly report that formation of SiO₂ layer on Si surface can be effectively prevented by flowing the Si₂H_6 gas during the heating-up procedure for amorphous Si depositions. In this way, amorphously deposited Si layer onto crystalline Si substrates can be grown epitaxially during the post-de-position heat treatments. The suppression of surface SiD₂ can be explained in terms of adsorption of SiHx adspecies, instead of oxygen from residual gases in the reactors, to Si surfaces after desorption of hydrogen from H-passivated Si surfaces. Employing Si₂H_6 flowing and solid phase epitaxial growth, high-quality epitaxial Si layer can be obtained at low temperatures below 600℃ without conventional high temperature cleaning procedures.