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Applied Science and Convergence Technology 1997; 6(3): 263-266

Published online August 1, 1997

Copyright © The Korean Vacuum Society.

A study of interfacial characteristics for In0.1Ga0.9As / GaAs by photoreflectance measurement

Chul-Wook Lee,In-Soo Kim,Jeong-Sik Son,Dong-Lyeul Kim,Jae-Young Leem,In-Ho Bae


We studied an interfacial characteristics of In_(0.1)Ga_(0.9)As/GaAs by photoreflectance (PR) measurement at room temperature. With increasing thickness of epitaxial layer, Franz-Keldysh oscillation (FKO) periods of PR signals were decreased, and interfacial electric field was decreased. This can be explained by the increase of defects due to lattice mismatch near the heterointerface between InGaAs and GaAs. For the thickness of epitaxial layer thinner than the 300 Å, InGaAs epitaxial layer closed to critical thickness and increased strain, and then the bandgap energy shifted high energy greatly.

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