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Applied Science and Convergence Technology 1997; 6(3): 282-286

Published online August 1, 1997

Copyright © The Korean Vacuum Society.

Reactive ion etching of InP using Cl₂ / CH₄ / H₂ discharges

Ik-Soo Choi,Byung-Teak Lee,Dong-Keun Kim,Jong-Sam Park

Abstract

Reactive ion etching (RIE) characteristics of InP in the Cl₂/CH₄/H₂ discharges was investigated, as a function of the rf power, substrate temperature and gas composition. It was observed that the etch rate increased as the rf power, sample temperature and/or Cl₂ gas concentration increased. Etch rate of about 0.9 ㎛/min was obtained at the optimum condition of 150 W rf power, 180℃ substrate temperature and 10Cl₂/5CH₂/85H₂ gas ratio. Polymer formation was completely suppressed by adding Cl₂ to the CH₄/H₂ discharges.

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