Applied Science and Convergence Technology 1998; 7(3): 242-247
Published online August 1, 1998
Copyright © The Korean Vacuum Society.
H. K. Jang,G. S. Kim,S. W. Whangbo,Y. S. Lee,C. N. Whang,Y. Z. Yoo,H. G. Kim
Hydrogenated amorphous carbon nitride[a-C:H(N)] films were deposited on p-type Si(100) at room temperature with substrate bias voltage of 200 V by DC saddle-field plasma-enhanced chemical vapor deposition. Effects of the ratio of N₂to CH₄(N₂/CH₄), in the range of 0 and 4 on such properties as optical properties, microstucture, relative fraction of nitrogen and carbon, etc. of the films have been investigated. The thickness of the a-C:H(N) film was abruptly decreased with the addition of nitrogen, but at N₂/CH₄＞ 0.5, the thickness of the film gradually decreased with the increase of the N₂/CH₄. The ratio of N to C(N/C) of the films was saturated at 0.25 with the increase of N₂/CH₄. N-H, C≡N bonds of the films increased but C-H bond decreased with the increase of N₂/CH₄. Optical band gap energy of the film decreased from 2.53 eV deposited with pure methane to 2.3 eV at the ratio of N₂/CH₄=4.