Applied Science and Convergence Technology 1998; 7(4): 293-299
Published online November 1, 1998
Copyright © The Korean Vacuum Society.
Rae-Jun Park,Jeong-Seon Kim,Chan-Cuk Hwang,Ki-Seok An,Chong-Yun Park
We have investigated the atomic and electronic structures of Cu-adsorbed Si(100)-2×1 surface, by using LEED and UPS. In the UPS spectra, the weak structures (peaks) related to Cu silicide appeared for low coverages less than 1.3 ML at room temperature, and the intensity of Cu 3d band rapidly increased with respect to Cu coverages. The Cu silicide peaks become clear after Cu deposition at room temperature followed by high temperature annealing (≥300℃) or for Cu deposited surface at the substrate temperature of 400℃. On the other hand, these structures disappeared by annealing at 750℃. At very low coverage, a surface state near Fermi level (E_F) was observed at 400℃. According to the rigid band model, it seems to be originated from the surface empty state occupied partially with Cu 4s¹ electron. In the LEED patterns, no Cu-induced superstructure observed for RT-depositions and post annealing, while there were several surface structures which depend on substrate temperatures and coverages. we observed the clean surface 2×1+2×2 phase for 1.5 ML at 400℃, the clean surface 2×1+5×1 phase for 0.5 ML at 450℃ and the clean surface 2×1+2×2+5×2+5×5+10×2 mixed phases for 3 ML at 450℃.