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Applied Science and Convergence Technology 1998; 7(4): 328-333

Published online November 1, 1998

Copyright © The Korean Vacuum Society.

Growth and characterizations of InAlAs epilayers and InGaAs / InAlAs quantum well structures by low pressure metalorganic chemical vapor deposition

Kyeongran Yoo,Youngboo Moon,Tae-Wan Lee,Euijoon Yoon


Lattice-matched InAlAs epilayers were grown on (001) InP substrate by low pressure metalorganic chemical vapor deposition. The effects of growth conditions on the properties of InAlAs were analyzed, and InGaAs / InAlAs single and multiple quantum wells were successfully grown. It was observed that the optical property of InAlAs epilayers was improved in the temperature range of 620~700℃ as the growth temperature increased due to the reduction of oxygen incorporation, however, the crystallinity decreased at temperatures higher than 750℃ due to the degraded crystallinity of the buffer layers. The enhanced incorporation of Al into epilayer was observed at high AsH₃ flow rates and it was explained in terms of the differences in bond strengths of Al-As and In-As. The measured photoluminescence peak energies from InGaAs / InAlAs single quantum wells were consistent with the calculated ones based on transfer matrix method. High-order satellite peaks and fine thickness fringes were observed by high-resolution x-ray diffraction, implying that the high-quality multiple quantum wells with abrupt heterointerfaces were grown.

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