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Applied Science and Convergence Technology 2000; 9(4): 353-359

Published online December 1, 2000

Copyright © The Korean Vacuum Society.

Crystallization behavior and thermoelectric properties of p - type (Bi₁-xSbx)₂Te₃ thin films prepared by magnetron sputtering

Dae Joong Yeon,Tae Sung Oh

Abstract

(Bi_(0.15)Sb_(0.85))₂Te₃ and (Bi_(1-x)Sb_x)₂Te₃ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the Sb₂Te₃ content. The (Bi_(0.15)Sb_(0.85))₂Te₃ film, deposited by DC sputtering at 300℃ with rotating the Coming glass substrate at 10 rpm, was fully crystallized to (Bi,Sb)₂Te₃ phase with c-axis preferred orientation. This (Bi_(0.15)Sb_(0.85))₂Te₃ film exhibited the Seebeck coefficient of 185 ㎶/K which was higher than the values of other (Bi_(0.15)Sb_(0.85))₂Te₃ films fabricated with different sputtering conditions. With increasing the Sb₂Te₃ content, the Seebeck coefficient and electrical resistivity of p-type (Bi_(1-x)Sb_x)₂Te₃ (0.77≤x≤1.0) film were lowered. Among p-type (Bi(1-x)Sb_x)₂Te₃ films, a maximum power factor of 0.79×10^(-3) W/K²-m was obtained at (Bi_(0.05)Sb_(0.95))₂Te₃ composition.

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