Applied Science and Convergence Technology 2000; 9(4): 373-378
Published online December 1, 2000
Copyright © The Korean Vacuum Society.
Seok Kiu Lee,Joon Hyeong Kim,Doo Hyun Choi,Min Wook Hwang,Myung Yoon Um,Yoon Hae Kim,Jin Yong Kim,Hyeong Joon Kim
There was a great difference in the formation kinetics of TiO₂ and Bi₂O₃ on silicon, but the growth of bismuth titanate (BIT) thin film was mainly limited by the formation of TiO₂. As a result, the BIT film was easy to be lack of bismuth. The pulse injection metalorganic chemical vapor deposition (MOCVD) process was introduced in order to overcome this problem by recovering the insufficient bismuth content in the film. By this pulse injection method, bismuth content was increased and also the uniform in-depth composition of the film was attained with a abrupt Bi₄Ti₃O₁₂/Si interface. In addition, the crystallinity of Bi₄Ti₃O₁₂ thin film prepared by pulse injection process was greatly improved and the leakage current density was lowered by ½~⅓ of magnitude. Clockwise hysteresis of C-V was observed and the ferroelectric switching was confirmed for Bi₄Ti₃O₁₂ film deposited by pulse injection method.