Applied Science and Convergence Technology 2001; 10(4): 396-402
Published online December 1, 2001
Copyright © The Korean Vacuum Society.
J. W. Hyun,H. J. Oh,D. C. Choo,E. H. Choi,T. W. Kim,G. S. Cho,S. O. Kang
MgO thin films with 1000 Å thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 Å thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.