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Applied Science and Convergence Technology 2002; 11(1): 1-7

Published online April 1, 2002

Copyright © The Korean Vacuum Society.

Investigation on manufacturing and electrical properties of Ba0.5Sr0.5TiO₃ thin film capacitors using RF Magnetron Sputtering

Tae-Il Lee,In-Chul park,Hong-Bae Kim


We deposited Ba_(0.5)Sr_(0.5)TiO₃(BST) thin-films on Pt/Ti/SiO₂/Si substrates using RF magnetron sputtering method. A Substrate temperature was fixed at room temperature, while working gas flow ratio and RF Power were changed from 90:10 to 60:40 and 50 W, 75 W respectively. Also after BST thin films were deposited, we performed annealing in oxygen atmosphere using Rapid Thermal Annealing. For capacitor application we deposited Pt using E-beam evaporator of UHV system. In a structural property study through XRD measurement we found that crystallization depends on annealing rather than working gas ratio or and RF Power. Electrical properties showed relatively superior characteristic on the annealed sample with 50 W of RF Power.

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