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Applied Science and Convergence Technology 2002; 11(1): 16-21

Published online April 1, 2002

Copyright © The Korean Vacuum Society.

The effects of oxygen on selective Si epitaxial growth using disilane ane hydrogen gas in low pressure chemical vapor deposition

Yong-Hoon Son,Sung-Gye Park,Sang-Hoon Kim,Ung-Yorl Lee,Seung-Eui Nam,Hyung-June Kim

Abstract

Selective epitaxial growth(SEG) of silicon were performed at low temperature under an ultraclean environment below 1000℃ using ultraclean Si₂H_6 and H₂ gases ambient in low pressure chemical vapor deposition(LPCVD). As a result of ultraclean processing, epitaxial Si layers with good quality were obtained for uniform and SEG wafer at temperatures range 600~710℃ and an incubation period of Si deposition only on SiO₂ was found. Low-temperature Si selectivity deposition condition and epitaxy on Si were achieved without addition of HCl. The epitaxial layer was found to be thicker than the poly layer deposited over the oxide. Incubation period prolonged for 20~30 sec can be obtained by O₂ addition. The surface morphologies & cross sections of the deposited films were observed with SEM, The structre of the Si films was evaluated XRD.

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