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Applied Science and Convergence Technology 2002; 11(1): 28-34

Published online April 1, 2002

Copyright © The Korean Vacuum Society.

Characterization of amorphous Sb - Bi - Te thin films as a function of Bi concentration

Jae-Hyeong Lee,D. Mangalaraj,Jun-Sin Yi

Abstract

Thin films of Sb_(2-x)Bi_xTe₃ (x=0.0, 0.5, and 1.0) are grown by vacuum evaporation. XRD analysis shows the amorphous nature of the films, and the composition studies confirm the stoichiometry of the films. Microstructural parameters of the films have been calculated and used to explain the electrical and optical properties of the films. It is observed that the carrier type has changed from p- to n-type at higher concentration (x=1.0) of Bi. The resistivity of the films decreases rapidly with the increase of Bi concentration. However, the refractive index and optical band gap of the films increase with the Bi concentration.

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