Applied Science and Convergence Technology 2002; 11(1): 43-49
Published online April 1, 2002
Copyright © The Korean Vacuum Society.
Il-Ho Kim,Sung Ho Park
Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of 1.1×10^(-6) Ω㎠ was achieved after annealing at 400℃/10sec, and a ohmic performance was degraded at higher annealing temperature due to the chemical reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact(high-10^(-6) Ω㎠) were maintained. This ohmic contact system is expected to be a promising candidate for compound semiconductor devices.