• Home
  • Sitemap
  • Contact us
Article View

Applied Science and Convergence Technology 2002; 11(2): 97-102

Published online June 1, 2002

Copyright © The Korean Vacuum Society.

Growth and structural characterization of ZnO thin film on silicon substrate by MOCVD method

Kwang Sik Kim,Jung Ho Lee,Hyoun Woo Kim

Abstract

Highly-oriented ZnO thin films has been successfully deposited on Si(100) by metal organic chemical vapor deposition(MOCVD) at 250℃~400℃. We report on the structural properties of ZnO thin film at various temperatures and at various ratios of the Ar and O₂ gas flow rates. The crystallinity of the thin films was improved and the surface smoothness decreased with the increase of the growth temperature. In x-ray diffraction analysis with respect to ZnO(0002) peak, the full width at half maximum (FWHM) of 0.4˚was achieved at 400℃.

Share this article on :

Stats or metrics