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Applied Science and Convergence Technology 2002; 11(2): 103-107

Published online June 1, 2002

Copyright © The Korean Vacuum Society.

Properties of MFSFET's with various gate electrodes using LiNbO₃ ferroelectric thin film

Soon-Won Jung,Kwang-Ho Kim


Metal/ferroelectric/semiconductor field effect transistors(MFSFET's) with various gate electrodes, that are aluminum, platinum and poly-Si, using rapid thermal annealed LiNbO₃/Si(100) structures were fabricated and the properties of the FET's have been discussed. The drain current of the “on” state of FET with Pt electrode was more than 3 orders of magnitude larger than the “off” state current at the same “read” gate voltage of 1.5 V, which means the memory operation of the MFSFET. A write voltage as low as about ±4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about 10³ s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.

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