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Applied Science and Convergence Technology 2001; 10(4): 411-415

Published online December 1, 2001

Copyright © The Korean Vacuum Society.

Dry etching of tin oxide thin films using an atmospheric pressure cold plasma

Bong-Ju LEE,Hideomi KOINUMA


Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of tin oxide (SnO₂) thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the cathode material by an analysis with optical emission spectroscopy as well as by the plasma impedance. The etching ability of this plasma was evaluated by an emission intensity as well as by the evaluation of impedance using a plasma I-V curve.

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