Applied Science and Convergence Technology 2004; 13(1): 1-8
Published online March 1, 2004
Copyright © The Korean Vacuum Society.
H-J. Woo,H-W. Choi,J-K Kim,Y-Y. Chi
The SOI wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by TRIM simulation that 65 keV proton implantation is required for thc standard SOI wafer (200 ㎚ SOI, 400 ㎚ BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the 6~9×10^(16)H^+/㎠ range, and the annealing at 550℃ for 30 minutes is expected to be optimum for wafer splitting. The depth distribution of implanted hydrogen has been experimentally confirmed by ERD and SIMS measurements. The microstructure evolution in the damaged layer was also studied by X-TEM analysis.