• Home
  • Sitemap
  • Contact us
Article View

Applied Science and Convergence Technology 2006; 15(3): 280-286

Published online May 1, 2006

Copyright © The Korean Vacuum Society.

Improved Uniformity of GaAs/AlGaAs DBR Using the Digital‐Alloy AlGaAs Layer

N. K. Cho , J. D. Song , W. J. Choi , J. I. Lee , Heonsu Jeon

Abstract

A distributed Bragg reflector (DBR) for the application of 1.3㎛ vertical cavity surface emitting laser (VCSEL) has grown by digital alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3 inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.

Keywords: 디지털 합금,DBR,균일도,VCSEL,Digital alloy,Uniformity

Share this article on :

Stats or metrics

Related articles in ASCT