A distributed Bragg reflector (DBR) for the application of 1.3㎛ vertical cavity surface emitting laser (VCSEL) has grown by digital alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3 inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.

Keywords: 디지털 합금,DBR,균일도,VCSEL,Digital alloy,Uniformity