Applied Science and Convergence Technology 2006; 15(3): 294-300
Published online May 1, 2006
Copyright © The Korean Vacuum Society.
H. S. Kwack , J. S. Kim , J. H. Lee , S. U. Hong , B. S. Choi , D. K. Oh , Y. H. Cho
We fabricated the distributed feedback (DFB) InP/InGaAs/InP grating structures on InP (100) substrates by metal organic chemical vapor deposition, and their structural properties were investigated by atomic force microscopy and scanning electron microscopy. Self assembled InAs/InAlGaAs quantum dots (QDs) were grown on the InP/InGaAs/InP grating structures by molecular beam epitaxy, and their optical properties were compared with InAs/InAlGaAs QDs without grating structure. The duty of the grating structures was about 30%. The PL peak position of InAs/InAlGaAs QDs grown on the grating structure was 1605 ㎚, which was red shifted by 18 ㎚ from that of the InAs/InAlGaAs QDs without grating structure. This indicates that the formation of InAs/InAlGaAs QDs was affected by the existence of the DFB grating structures.
Keywords: 분포귀환형,InAs/InAlGaAs,양자점,분자선증착기,Distributed feedback,Quantum dot,Molecular beam epitaxy