We fabricated the distributed feedback (DFB) InP/InGaAs/InP grating structures on InP (100) substrates by metal organic chemical vapor deposition, and their structural properties were investigated by atomic force microscopy and scanning electron microscopy. Self assembled InAs/InAlGaAs quantum dots (QDs) were grown on the InP/InGaAs/InP grating structures by molecular beam epitaxy, and their optical properties were compared with InAs/InAlGaAs QDs without grating structure. The duty of the grating structures was about 30%. The PL peak position of InAs/InAlGaAs QDs grown on the grating structure was 1605 ㎚, which was red shifted by 18 ㎚ from that of the InAs/InAlGaAs QDs without grating structure. This indicates that the formation of InAs/InAlGaAs QDs was affected by the existence of the DFB grating structures.

Keywords: 분포귀환형,InAs/InAlGaAs,양자점,분자선증착기,Distributed feedback,Quantum dot,Molecular beam epitaxy