The effect of temperature gradient between the substrate and ambient gas on the structural characteristics of GaN nanorods grown on r-plane sapphire substrates by hydride vapor phase epitaxy was investigated. The density, diameter, and length strongly depended on the tempearture gradient. In addition, the cross-sectional shape of the nanorrods at the end of growth was found to be more dependedent on the temperature of a substrate itself than the temperature gradient.

Keywords: 질화갈륨,나노 막대,Hydride vapor phase epitaxy,비극성,r-면 사파이어,GaN,Nanorods,Nonpolar,R-plane sapphire