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Applied Science and Convergence Technology 2009; 18(1): 44-48

Published online January 1, 2009

Copyright © The Korean Vacuum Society.

Effect of Temperature Gradient on the Characteristics of GaN Nanorods Grown on R-plane Sapphire Substrates

Boa Shin , Chinkyo Kim

Abstract

The effect of temperature gradient between the substrate and ambient gas on the structural characteristics of GaN nanorods grown on r-plane sapphire substrates by hydride vapor phase epitaxy was investigated. The density, diameter, and length strongly depended on the tempearture gradient. In addition, the cross-sectional shape of the nanorrods at the end of growth was found to be more dependedent on the temperature of a substrate itself than the temperature gradient.

Keywords: 질화갈륨,나노 막대,Hydride vapor phase epitaxy,비극성,r-면 사파이어,GaN,Nanorods,Nonpolar,R-plane sapphire

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