Applied Science and Convergence Technology 2009; 18(4): 259-265
Published online July 1, 2009
Copyright © The Korean Vacuum Society.
H. W. Ra , R. Khan , J. T. Kim , C. H. Yeo , Y. H. Im
We fabricated the field effect transistor using single crystalline ZnO nanowires synthesized by a conventional thermal evaporation method and investigated their basic properties under the various conditions such as ultraviolet irradiation, reducing gas and electrolyte. The typical carrier concentration and mobility of the single crystalline ZnO nanowire with a diameter
of 100 ㎚ and length of 5 um were 1.30×10¹? ㎝?³ and 15.6 ㎠ V?¹ s?¹, respectively. The current of ZnO nanowire under ultraviolet irradiation significantly increased about 400 times higher as compared to in the darkness. In addition, the ZnO nanowire showed typical sensing characteristics for H₂ and CO due to well-known surface reactions and typical current-voltage characteristics under the 0.1 M NaCl electrolyte.
Keywords: 산화아연,나노선,전계효과트랜지스터,센서,ZnO,Nanowire,Field effect transistor,Sensor