• Home
  • Sitemap
  • Contact us
Article View

Applied Science and Convergence Technology 2010; 19(2): 91-95

Published online March 1, 2010

Copyright © The Korean Vacuum Society.

Fabrication of TiO₂ Thin Films Using UV-enhanced Atomic Layer Deposition at Room Temperature

Byoung H. Lee , Myung M. Sung


A UV-enhanced atomic layer deposition (UV-ALD) process was developed to deposit TiO₂ thin films on Si substrates using titanium isopropoxide(TIP) and H₂O as precursors with UV light. In the UV-ALD process, the surface reactions were found to be self-limiting and complementary enough to yield a uniform, conformal, pure TiO₂ thin film on Si substrates at room temperature. The UV light was very effective to obtain the high-quality TiO₂ thin films with good adhesive strength on Si substrates. The UV-ALD process was applied to produce uniform and conformal TiO₂ coats into deep trenches with high aspect ratio.

Keywords: 원자층 증착,자외선,TiO₂,표면포화반응,TIP,Atomic layer deposition,UV,Surface saturated reaction

Share this article on :

Stats or metrics

Related articles in ASCT