The growth interruption effects on growth mode of the GaAs and AlGaAs epitaxial layers grown on GaAs substrate by molecular beam epitaxy were investigated. Growth process of the epitaxial layers as a function of the growth interruption time was observed by reflection high energy electron diffraction (RHEED). The growth interruption time was 0, 15, 30, 60 s. The GaAs/Al_0.3Ga_0.7As multi quantum wells (MQWs) with different growth interruption time were grown and its properties were investigated. RHEED intensity oscillation and optical property of the MQWs were dependent on the growth interruption time. When the growth interruption time was 30 s, interface between the well and barrier layers became sharper.

Keywords: 성장 멈춤,GaAs/AlGaAs,반사 고에너지 전자회절,분자선에피택시,포토루미네슨스,Growth interruption,Reflection high energy electron diffraction,Molecular beam Epitaxy,Photoluminescence