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Applied Science and Convergence Technology 2010; 19(6): 495-500

Published online November 1, 2010

Copyright © The Korean Vacuum Society.

Water Vapor Permeation Properties of Al₂O₃/TiO₂ Passivation Layer Deposited by Atomic Layer Deposition

Tae-Suk Kwon , Yeon-Keon Moon , Woong-Sun Kim , Dae-Yong Moon , Kyung-Taek Kim , Sae-Young Shin , Dong-Suk Han , Jae-Gun Park , Jong-Wan Park

Abstract

In this study, Al₂O₃ and TiO₂ films was deposited on to PES (poly(ethersulfon) substrate by using atomic layer deposition as functions of deposition temperature and plasma power. The density and carbon contents of Al₂O₃ and TiO₂ films was changed by varying process conditions. High density thin films was achieved through optimizing the process conditions. Buffer layer was deposited prior to the processing of upper thin films to avoid PES surface destruction during the high power plasma process and to enhances the tortuous path for water vapor permeation for the defect decoupling effect. The water vapor transmission rate by using MOCON test was investigated to analyze the effect. Water vaper permeation properties was improved by using the inorganic multi-layer passivation layer and activation energy of the water vapor permeation was increased.

Keywords: 보호막,투습률,원자층 증착법,MOCON test,Passivation layer,Water vapor permeation,Atomic layer deposition

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